Abstract Distribution of Ge atoms between tetrahedral and octahedral sites in the spinel-type structure of Fe2.64Ge0.36O4 thin films fabricated by radio frequency sputtering with a composite target of magnetite and Ge has been investigated by extended X-ray absorption fine structure analysis. The local structural changes around the Ge atoms in the films induced by annealing at 573 and 873 K are discussed through comparison of the local structure for sintered crystalline Fe2.7Ge0.3O4 in which Ge atoms preferentially located at the tetrahedral site of the spinel-type structure. This work provides successful information on the structural change with magnetic property of the thin films as follows: the Ge atoms statistically distributed at the tetrahedral and octahedral sites of the as-synthesized films and preferentially occupied the tetrahedral site by annealing at 873 K corresponding to the increase in magnetization.

中文翻译：

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Ge掺杂磁铁矿薄膜中Ge原子周围的局部结构

摘要 通过扩展X 射线吸收精细结构分析，研究了用磁铁矿和Ge 复合靶材射频溅射制备的Fe2.64Ge0.36O4 薄膜尖晶石型结构中Ge 原子在四面体和八面体位点之间的分布。通过比较烧结晶体 Fe2.7Ge0.3O4 的局部结构，其中 Ge 原子优先位于尖晶石型四面体位点，讨论了在 573 和 873 K 退火引起的薄膜中 Ge 原子周围的局部结构变化结构体。这项工作提供了关于薄膜磁性结构变化的成功信息，如下所示：