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Photovoltaic Performance Enhancement of All‐Inorganic CsPbBr3 Perovskite Solar Cells Using In2S3 as Electron Transport Layer via Facile Reflux‐Condensation Process
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-12-12 , DOI: 10.1002/pssa.202000665 Caiyou Huang 1 , Jianlin Chen 1 , Zhuang Liu 1 , Shu Chen 1 , Wei Qiu 1 , Chang Liu 1 , Zhuoyin Peng 1 , Jian Chen 1
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-12-12 , DOI: 10.1002/pssa.202000665 Caiyou Huang 1 , Jianlin Chen 1 , Zhuang Liu 1 , Shu Chen 1 , Wei Qiu 1 , Chang Liu 1 , Zhuoyin Peng 1 , Jian Chen 1
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All‐inorganic perovskite solar cells (PSCs) have attracted tremendous attention over the past few years owing to their outstanding thermal and moiture stability. Electron transport layers (ETLs) in PSCs play a prominent role of electron extraction and transportation as well as hole blocking for a high power conversion efficiency (PCE). Indium sulfide (In2S3) films have been introduced as a promising ETL of PSCs recently due to their high carrier mobility, appropriate band gap, and controllable electrical characteristics. Herein, a facile wet chemistry method is proposed to prepare In2S3 films for the ETLs of all‐inorganic CsPbBr3 PSCs with an architecture of fluorine‐doped tin oxide/In2S3/CsPbBr3/carbon. The resultant compact In2S3 films show a certain visible light absorption with a bandgap of 2.51 eV. With the optimal 3000 rpm speed of In2S3 spin‐coating, the best‐performing In2S3 based device presents a higher champion PCE of 5.83% with open circuit voltage of 1.34 V, a short circuit current density of 6.74 mA cm−2 and a fill factor of 0.65. The better performance of devices based on In2S3 ETLs is attributed to their more suitable energy level matching with less open circuit voltage loss, better light harvesting, and electron extraction capability enhancement.
中文翻译：
使用In2S3作为电子输运层，通过便捷的回流-冷凝过程增强了全无机CsPbBr3钙钛矿型太阳能电池的光伏性能
过去几年，全无机钙钛矿太阳能电池（PSC）由于其出色的热稳定性和水分稳定性而备受关注。PSC中的电子传输层（ETL）在电子提取和传输以及空穴阻挡方面发挥着重要作用，以实现高功率转换效率（PCE）。硫化铟（In 2 S 3）薄膜由于其高的载流子迁移率，适当的带隙和可控的电气特性，最近被引入作为有前景的PSC的ETL。本文提出了一种简便的湿化学方法来制备具有掺杂氟的氧化锡/ In 2结构的全无机CsPbBr 3 PSC的ETL的In 2 S 3膜。S 3 / CsPbBr 3 /碳。所得的致密In 2 S 3薄膜显示出一定的可见光吸收，带隙为2.51 eV。凭借In 2 S 3旋涂的最佳3000 rpm速度，性能最佳的基于In 2 S 3的器件在开路电压为1.34 V，短路电流密度为6.74 mA cm的情况下，具有更高的冠军PCE，为5.83％-2和填充系数0.65。基于In 2 S 3的设备的更好性能 ETL归因于其更合适的能级匹配，更少的开路电压损耗，更好的光收集和增强的电子提取能力。
更新日期：2021-02-17
中文翻译：
使用In2S3作为电子输运层，通过便捷的回流-冷凝过程增强了全无机CsPbBr3钙钛矿型太阳能电池的光伏性能
过去几年，全无机钙钛矿太阳能电池（PSC）由于其出色的热稳定性和水分稳定性而备受关注。PSC中的电子传输层（ETL）在电子提取和传输以及空穴阻挡方面发挥着重要作用，以实现高功率转换效率（PCE）。硫化铟（In 2 S 3）薄膜由于其高的载流子迁移率，适当的带隙和可控的电气特性，最近被引入作为有前景的PSC的ETL。本文提出了一种简便的湿化学方法来制备具有掺杂氟的氧化锡/ In 2结构的全无机CsPbBr 3 PSC的ETL的In 2 S 3膜。S 3 / CsPbBr 3 /碳。所得的致密In 2 S 3薄膜显示出一定的可见光吸收，带隙为2.51 eV。凭借In 2 S 3旋涂的最佳3000 rpm速度，性能最佳的基于In 2 S 3的器件在开路电压为1.34 V，短路电流密度为6.74 mA cm的情况下，具有更高的冠军PCE，为5.83％-2和填充系数0.65。基于In 2 S 3的设备的更好性能 ETL归因于其更合适的能级匹配，更少的开路电压损耗，更好的光收集和增强的电子提取能力。
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