Herein, the optimization of (In)GaN heterostructures for chemical sensing is presented. The metalorganic vapor phase epitaxy (MOVPE)‐grown sensor consists of an In_xGa_1−xN quantum well (QW) placed close to the surface of a GaN substrate with a thin GaN cap layer on top. The photoluminescence (PL) wavelength of this QW is sensitive to surface potential changes and thus its optical signal is used as sensor response. Simulations are performed with nextnano to improve its sensitivity. Sensor parameters such as the cap layer thickness d, QW thickness L_z, background buffer layer doping concentration N, and indium concentration x of the QW are varied. It is found that a thin cap layer, together with high background doping and medium QW thickness, is ideal. The indium content does not show a strong influence on sensitivity. The trends found in the simulations are mostly confirmed in real‐world experiments performed in a chemical sensing setup, yet quantitative deviations exist.

中文翻译：

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（In）GaN异质结构在传感应用中的优化

在此，提出了用于化学传感的（In）GaN异质结构的优化。金属有机气相外延（MOVPE）生长的传感器由一个In _x Ga _{1- x} N量子阱（QW）组成，该量子阱靠近GaN衬底的表面放置，顶部有一个薄的GaN盖层。该QW的光致发光（PL）波长对表面电势变化敏感，因此其光信号用作传感器响应。使用nextnano进行仿真以提高其灵敏度。传感器参数，例如盖层厚度d，QW厚度L _z，背景缓冲层掺杂浓度N和铟浓度xQW的不同。发现薄的盖层以及高的背景掺杂和中等的QW厚度是理想的。铟含量对灵敏度没有显着影响。在模拟中发现的趋势大部分已在化学感测装置中进行的实际实验中得到证实，但存在定量偏差。