An analytical frequency‐domain model, based on a temperature‐dependent equivalent‐single‐conductor (ESC) model, for coupled interconnects of multilayer graphene nanoribbon (MLGNR) and mixed carbon‐nanotube bundle (MCB) is presented. In this model, the input‐output transfer function of coupled interconnects is derived under dynamic switching conditions to analyze its bandwidth, delay, and stability performance. The obtained results demonstrate the best bandwidth performance of AsF₅‐doped‐MLGNR among the undoped‐MLGNR (U‐MLGNR), doped‐MLGNR (viz., AsF₅‐doped and FeCl₃‐doped), MCB, and Cu interconnects. An improvement in a bandwidth of 14, 8.8, and 63.2 GHz is obtained with global length (≈1000 µm) AsF₅‐doped‐MLGNR in comparison with U‐MLGNR, MCB, and Cu, respectively. Based on the Nyquist stability criterion, interconnects of doped‐MLGNR are found more stable than their U‐MLGNR and MCB counterparts, however, less stable than Cu interconnects. Also, a frequency‐domain model for complementary metal–oxide semiconductor (CMOS)‐gate‐driven single MLGNR interconnect is derived. It is noted that using the proposed CMOS‐gate based model, a bandwidth improvement of 12.25× is obtained with global length AsF₅‐doped‐MLGNR with respect to a linear resistive model. Furthermore, the temperature‐dependent, frequency‐domain analysis of the capacitively coupled interconnects under functional switching conditions reveals that AsF₅‐doped‐MLGNR interconnects are highly capable of filtering out the noise frequency components in the crosstalk‐induced noise

中文翻译：

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掺杂多层石墨烯纳米带和碳纳米管混合束耦合互连的分析频域模型

提出了一种基于温度依赖的等效单导体（ESC）模型的分析频域模型，该模型用于多层石墨烯纳米带（MLGNR）和混合碳纳米管束（MCB）的耦合互连。在此模型中，耦合互连的输入输出传递函数是在动态开关条件下得出的，以分析其带宽，延迟和稳定性能。获得的结果表明，在未掺杂的MLGNR（U-MLGNR），掺杂的MLGNR（即，AsF ₅掺杂和FeCl ₃掺杂），MCB和Cu互连中，AsF ₅掺杂MLGNR的最佳带宽性能。使用全球长度（≈1000µm）AsF _5，可获得14、8.8和63.2 GHz带宽的改善分别与U-MLGNR，MCB和Cu相比，掺杂了MLGNR。根据Nyquist稳定性标准，发现掺杂的MLGNR互连比其U-MLGNR和MCB互连更稳定，但是比Cu互连更不稳定。此外，推导了互补金属氧化物半导体（CMOS）门驱动的单个MLGNR互连的频域模型。注意，使用建议的基于CMOS门的模型，相对于线性电阻模型，使用整体长度为AsF ₅掺杂的MLGNR可获得12.25倍的带宽改善。此外，在功能开关条件下对电容耦合互连的温度相关的频域分析表明，AsF ₅掺杂的MLGNR互连极有能力滤除串扰引起的噪声中的噪声频率分量