The Role of Charge and Recombination-Enhanced Defect Reaction Effects in the Dissociation of FeB Pairs in p-Type Silicon under Carrier Injection,Physica Status Solidi-Rapid Research Letters

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The Role of Charge and Recombination-Enhanced Defect Reaction Effects in the Dissociation of FeB Pairs in p-Type Silicon under Carrier Injection
Physica Status Solidi-Rapid Research Letters ( IF 2.5 ) Pub Date : 2020-12-12 , DOI: 10.1002/pssr.202000520
Chang Sun ₁ , Yan Zhu ₂ , Mattias Juhl ₂ , Wenjie Yang ₁ , Fiacre Rougieux ₂ , Ziv Hameiri ₂ , Daniel Macdonald ₁

Affiliation

The dissociation of FeB pairs in p-type silicon under injection is often explained by the charge state change of interstitial Fe (Fe_i) from positive to neutral. It is also sometimes interpreted as a recombination-enhanced defect reaction (REDR) mechanism. The charge effect and the REDR have fundamentally different impacts on the dissociation/association reactions: the former changes the concentration of Fe_i⁺, whereas the latter changes the reaction rate constants. Herein, the two effects are investigated and compared through measuring and analyzing the dynamics of the reactions. The results confirm that the dissociation of FeB under carrier injection cannot be purely attributed to the change of charge states. The extracted dissociation/association rate constant ratio shows an approximately linear dependence on the recombination rate on each FeB pair, indicating the REDR effect. The results allow the two effects to be directly compared, highlighting the dominant role of the REDR effect in dissociating the pairs.

中文翻译：

电荷和复合增强缺陷反应效应在载流子注入下 p 型硅中 FeB 对离解中的作用

注入下 p 型硅中 FeB 对的解离通常可以用间隙 Fe (Fe _i ) 从正到中性的电荷状态变化来解释。它有时也被解释为重组增强缺陷反应 (REDR) 机制。电荷效应和REDR对解离/缔合反应有着根本不同的影响：前者改变了Fe _i⁺的浓度，而后者改变反应速率常数。在此，通过测量和分析反应动力学来研究和比较这两种效应。结果证实，载流子注入下 FeB 的解离不能完全归因于电荷状态的变化。提取的解离/结合速率常数比显示出对每个 FeB 对的重组率的近似线性依赖性，表明 REDR 效应。结果允许直接比较这两种效应，突出了 REDR 效应在分离对中的主导作用。

更新日期：2020-12-12

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