Hybrid organic‐inorganic polymeric films are widely used in various areas, for encapsulation, dielectrics, super‐hydrophobic surfaces, membranes, and other applications, because of the features of their organic and inorganic components. The initiated chemical vapor deposition (iCVD) process is developed to synthesize hybrid polymeric films via this approach. However, the conventional iCVD process is based on laminar injection, and has difficulty depositing hybrid films with uniform thickness and composition over the large areas required by industry. In this work, the geometry of the iCVD chamber is newly designed to enable conformal and uniform deposition over an 8‐inch area, using a dual showerhead structure injection system. The inorganic concentration and deposition rate can be linearly controlled by adjusting the flow ratio of the inorganic precursor and organic monomer, up to 25% and 2.75 nm min⁻¹, respectively. In addition, the dual showerhead injector reduces the source consumption by 37%, compared to a conventional laminar flow iCVD chamber, while depositing a film with the same thickness and composition. The surface roughness of the entire 8‐inch area is less than 0.6 nm, showing that very uniform and homogeneous hybrid polymeric films can be successfully synthesized over a large area. In addition, the variation in electrical capacitance between metal–insulator–metal (MIM) structure devices is measured, and is within 4.1% over the entire wafer for films deposited with the dual showerhead chamber, compared with 30% for the conventional iCVD chamber. The iCVD process with the dual showerhead structure enables the synthesis of conformal and uniform hybrid polymeric films over a large‐scale area with lower source consumption, compared to conventional iCVD.

中文翻译：

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通过化学气相沉积法大面积，共形和均匀地合成杂化聚合物薄膜

杂化有机-无机聚合物薄膜由于其有机和无机成分的特性而广泛用于封装，电介质，超疏水表面，膜和其他应用的各个领域。通过这种方法，开发了引发化学气相沉积（iCVD）工艺以合成杂化聚合物薄膜。然而，常规的iCVD工艺基于层流注入，并且难以在工业所需的大面积上沉积具有均匀厚度和组成的混合膜。在这项工作中，iCVD腔室的几何形状经过重新设计，可使用双喷头结构注入系统在8英寸区域上保形和均匀沉积。^-1， 分别。此外，与传统的层流iCVD腔室相比，双喷头喷射器可将源消耗降低37％，同时沉积具有相同厚度和成分的薄膜。整个8英寸区域的表面粗糙度小于0.6 nm，表明可以在大面积上成功地合成非常均匀且均匀的杂化聚合物薄膜。此外，还测量了金属-绝缘体-金属（MIM）结构器件之间的电容变化，对于使用双喷头腔室沉积的薄膜，整个晶圆的电容变化范围在4.1％以内，而传统的iCVD腔室则为30％。采用双喷淋头结构的iCVD工艺可在大面积上合成保形且均匀的杂化聚合物薄膜，同时降低了源消耗，