Abstract

Molecular dynamics (MD) was used to build a simulation model for skiving single crystal silicon (SCS) with different tool radius. Through the analysis of phase change, instantaneous atomic position, temperature, Wigner–Seitz defects, stress and other variables, and the mechanical state distribution of SCS during processing is studied. The results show that the amorphous phase transition process occurs in the process of skiving SCS with different tool radii, the difference is that amorphous atoms use chips during sharp corner cutting. The form is removed, and the amorphous atoms in the rounded tool are further compressed directly under the tool, causing subsurface damage. The removal mechanism of sharp corner cutter chips is shear, and the removal mechanism of round corner cutter chips is shear and extrusion. And as the radius of the tool increases, the number of compressed atoms below the tool increases directly, resulting in a decrease in the quality of the processed surface.

摘要

分子动力学（MD）用于建立一个模拟模型，用于削削具有不同刀具半径的单晶硅（SCS）。通过分析相变，瞬时原子位置，温度，Wigner-Seitz缺陷，应力等变量，以及加工过程中SCS的机械状态分布，进行了研究。结果表明，在刀具半径不同的情况下，切削SCS过程中发生了非晶相变过程，区别在于非晶原子在尖角切削时会使用切屑。模具被移除，并且在圆形工具中的无定形原子在工具的正下方被进一步压缩，从而导致地下损坏。尖角切屑的去除机理是剪切，圆角切屑的去除机理是剪切和挤压。随着工具半径的增加，