Abstract In this work, we present the role of reaction temperature in formation and characterization of CdxZn1-xS/PVA nanocomposites.CdxZn1-xS/PVA (x = 0.1, 0.2, 0.8) have been prepared by SILAR method. In the process of nanoparticles growth, the method of simultaneous adsorption of cations from electrolyte precursors was used. The obtained samples were investigated by X-ray diffraction (XRD), Scanning electron microscopy (SEM), Energy-dispersive X-ray spectroscopy (EDX), Ultraviolet-visible spectrophotometer (UV-VIS) and E7-20 (MNIPI-Belarus) devices. The analyses of XRD pattern show that, in room temperature with increasing of concentration of Cd2+ ions, the size of particles increasing. The mechanism of formation essentially depends from temperature of crystallization medium. The particles size were determined from XRD results by Debye Scherer equation. Dielectric and optical properties were used to characterize the final nanocomposite films before and after thermal annealing. The SEM images of sample were obtained at two different synthesis temperature. The elemental analyses used for analyses growth mechanism of ternary CdZnS nanoparticles.

中文翻译：

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通过 SILAR 方法，温度在 CdxZn1-xS/PVA 纳米复合材料的生长和形成中的作用

摘要 在这项工作中，我们介绍了反应温度在 CdxZn1-xS/PVA 纳米复合材料的形成和表征中的作用。CdxZn1-xS/PVA (x = 0.1, 0.2, 0.8) 已通过 SILAR 方法制备。在纳米颗粒的生长过程中，采用了同时从电解质前驱体中吸附阳离子的方法。通过X射线衍射（XRD）、扫描电子显微镜（SEM）、能量色散X射线光谱（EDX）、紫外-可见分光光度计（UV-VIS）和E7-20（MNIPI-Belarus）对所得样品进行研究设备。XRD图谱分析表明，在室温下，随着Cd2+离子浓度的增加，颗粒尺寸增大。形成机制主要取决于结晶介质的温度。通过德拜谢勒方程从XRD结果确定粒度。在热退火之前和之后，使用介电和光学特性来表征最终的纳米复合膜。样品的SEM图像是在两种不同的合成温度下获得的。用于分析三元 CdZnS 纳米颗粒生长机制的元素分析。