The performance of theoretical ultra-high-voltage power semiconductor devices has been predicted by means of numerical simulations using the Sentaurus technology computer-aided design tool. A general silicon carbide punch-through insulated-gate bipolar transistor (IGBT) structure has been implemented with suitable physics-based models and parameters to reflect the device characteristics in a wide range of device blocking voltages from 20 to 50 kV. The models for 20 kV class IGBTs have been implicitly validated by means of published experimental results. Mixed-mode simulations were performed that predicted total switching energy loss densities of 335, 629, 906 and 999 mJ/cm for 20, 30, 40 and 50 kV class devices respectively, at 25°C, JC = 20 A/cm2 and an ambipolar carrier lifetime of 20 s. While the IGBT on-state forward voltage drop reduces, the switching losses increase with higher charge-carrier lifetime for a given current density (e.g., 20 A/cm2). The large span of simulation results will be used as an input support to the design of future high-power converters.

中文翻译：

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超高压碳化硅绝缘栅双极晶体管的静态和动态性能预测

已使用 Sentaurus 技术计算机辅助设计工具通过数值模拟来预测理论超高压功率半导体器件的性能。通用的碳化硅穿通绝缘栅双极晶体管 (IGBT) 结构已采用合适的基于物理的模型和参数来实现，以反映 20 到 50 kV 的各种器件阻断电压下的器件特性。20 kV 级 IGBT 的模型已通过已发布的实验结果进行了隐式验证。执行混合模式模拟，预测 20、30、40 和 50 kV 级器件的总开关能量损耗密度分别为 335、629、906 和 999 mJ/cm，在 25°C、JC = 20 A/cm2 和双极载流子寿命为 20 秒。当IGBT导通正向压降降低时，对于给定的电流密度（例如，20 A/cm2），开关损耗随着电荷载流子寿命的增加而增加。大跨度的仿真结果将作为未来大功率转换器设计的输入支持。