The commercial light-emitting diode (LED) epitaxy materials—blue (i.e., InGaN/gallium nitride (GaN) multiple quantum wells (MQWs)) for lighting and display applications and green (i.e., InGaN/GaN MQWs) for display applications—are evaluated with a varied range of temperatures (10–800 K) for future applications in high-density power electronic modules. Six different InGaN/GaN MQW structures (peak wavelengths $\lambda _{\mathrm {p}} =448$ , 467, and 515 nm) are studied and compared to evaluate whether they can satisfy the light output requirements in the optocouplers at high temperatures. The spontaneous emission quantum efficiency (QE) of these LED epitaxy materials are studied using temperature-dependent and power photoluminescence (PL) spectroscopy. The LED materials, which have no pre-QWs, a higher number of QWs, and GaN buffer layer, show the highest QEs at high temperatures. All six LED materials’ exhibit 65% QE at 500 K and stable operation at 800 K were without failure or flickering. At 800 K, the spontaneous emission QEs are between 56% and 60% for blue and green LEDs for displays, respectively. This work evaluates the high-temperature capability of various LED epitaxy materials for future applications in the high-temperature optocouplers as the galvanic isolations in high-density power modules.

中文翻译：

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用于未来电力电子应用的不同 InGaN MQW 的高温自发发射量子效率分析


商用发光二极管 (LED) 外延材料 — 用于照明和显示应用的蓝色（即 InGaN/氮化镓 (GaN) 多量子阱 (MQW)）和用于显示应用的绿色（即 InGaN/GaN MQW） —针对未来在高密度电力电子模块中的应用，在不同的温度范围（10-800 K）下进行了评估。研究并比较了六种不同的 InGaN/GaN MQW 结构（峰值波长 $\lambda _{\mathrm {p}} =448$、467 和 515 nm），以评估它们是否能够满足光耦合器在高光下的光输出要求。温度。使用温度依赖性和功率光致发光 (PL) 光谱研究了这些 LED 外延材料的自发发射量子效率 (QE)。 LED材料没有预量子阱、更多数量的量子阱和GaN缓冲层，在高温下表现出最高的量子效率。所有六种 LED 材料在 500 K 下均表现出 65% 的 QE，并在 800 K 下稳定运行，没有故障或闪烁。在 800 K 时，显示器用蓝色和绿色 LED 的自发发射 QE 分别在 56% 和 60% 之间。这项工作评估了各种 LED 外延材料的高温能力，以供未来在高温光耦合器中作为高密度电源模块中的电流隔离应用。