In present work, the strain effect on the electronic, optical and thermoelectric properties of the Boron phosphide (BP) monolayer have been systematically investigated using first-principles calculations. Simulations show that the single layer at hand is a direct semiconductor possessing a $K-K$ band gap of 0.910 eV. This parameter increases when switching the strain nature from compressive to tensile. Results indicate that the optical absorption in the visible and near ultraviolet regimes may be enhanced by the lattice compression. Finally, the thermoelectric properties are considered by determining the Seebeck coefficient, electrical conductivity, electronic thermal conductivity and dimensionless figure of merit. Compressive strains lead to the improvement of the thermoelectric performance with the figure of merit up to 0.665 at room temperature. However, chemical potential variations may favor the figure of merit increasing up to values close to unity. The findings may provide important information to estimate the prospective applicability of the BP monolayer in the optoelectronic and thermoelectric technologies.

在目前的工作中，已经使用第一性原理系统地研究了应变对磷化硼（BP）单层电子，光学和热电性能的影响。仿真表明，手头的单层是直接半导体，具有$ķ-ķ$带隙为0.910 eV。当将应变性质从压缩切换为拉伸时，此参数会增加。结果表明，晶格压缩可增强可见光和近紫外光下的光吸收。最后，通过确定塞贝克系数，电导率，电子热导率和无量纲品质因数来考虑热电特性。压缩应变导致热电性能的改善，在室温下的品质因数高达0.665。但是，化学势的变化可能有利于品质因数增加到接近于单位的值。这些发现可能提供重要的信息，以估计BP单层在光电技术和热电技术中的预期适用性。