Several improvements are added to the MicroElec extension of Geant4 in order to track very low energy electrons, protons and ions in different materials. The interaction processes for ions and protons are extended down to 1 keV/nucleon, and to a few eVs for electrons, corresponding to the electron affinity or work-function of the selected material. Surface interaction processes for electrons are added, along with electron–phonon interactions for SiO₂. The models are validated for silicon and several new materials (C, Al, Ti, Ni, Cu, Ge, Ag, W, SiO₂ and Kapton), which significantly broadens the capabilities of MicroElec. Developed for microdosimetry simulation, the module can now also be used for secondary electron emission applications.

对Geant4的MicroElec扩展进行了一些改进，以便跟踪不同材料中的低能电子，质子和离子。离子和质子的相互作用过程扩展到1 keV /核仁，电子的几个eVs，对应于所选材料的电子亲和力或功函。添加了电子的表面相互作用过程以及SiO _2的电子-声子相互作用。该模型已针对硅和几种新材料（C，Al，Ti，Ni，Cu，Ge，Ag，W，SiO ₂和Kapton）进行了验证，这极大地扩展了MicroElec的功能。该模块是为微剂量模拟而开发的，现在也可以用于二次电子发射应用。