In this study, Y-bifurcated microchannels fabricated from a {100} silicon in 25 wt% tetramethylammonium hydroxide water solution at the temperature of 80 C have been presented and analysed. We studied the etching of acute angles with sides along the <n10> crystallographic directions in the masking layer where 1 < n < 8. We considered symmetrical acute corners in the masking layer with respect to the <100> crystallographic directions. The angles between the appropriate <n10> and <100> crystallographic directions were smaller than 45. Moreover, we observed asymmetrical acute corners formed by the <n10> and <m10> crystallographic directions, where m ≠ n. We found that the obtained convex corners were not distorted during etching. Consequently, it is not necessary to apply convex corner compensation. These fabricated undistorted convex corners represent the angles of the bifurcations. The sidewalls of the microchannels are defined by etched planes of the {n11} and {100}families. Analytical relations were derived for the widths of the microchannels. The results enable simple and cost-effective fabrication of various complex silicon microfluidic platforms.

在这项研究中，已提出并分析了由{100}硅在25 wt％的氢氧化四甲铵水溶液中在80摄氏度下制成的Y分叉微通道。我们研究了在掩膜层中沿< n 10>晶体学方向的边的锐角蚀刻，其中1 < n <8。我们考虑了在掩膜层中相对于<100>晶体学方向对称的锐角。适当的< n 10>和<100>结晶方向之间的夹角小于45。此外，我们观察到由< n 10>和< m 10>结晶方向形成的不对称锐角，其中m ≠ n。我们发现，获得的凸角在蚀刻过程中没有变形。因此，没有必要应用凸角补偿。这些未变形的凸角表示分叉的角度。微通道的侧壁由{ n 11}和{100}族的蚀刻平面限定。得出了微通道宽度的分析关系。结果使得能够简单且成本有效地制造各种复杂的硅微流体平台。