This work explored the performance evaluation of high-k gate stack on the analog and RF figure of merits (FOMs) of 9 nm Silicon-on-Insulator (SOI) FinFET. The results have been observed by replacing high-k dielectric with SiO₂ material between gate and fin. The dielectrics investigated in this exploration are Silicon Dioxide (SiO₂), Silicon Nitride (Si₃N₄), Hafnium Dioxide (HfO₂), and Aluminium Oxide (Al₂O₃). The characteristics such as DIBL (Drain Induced Barrier Lowering), SS (Subthreshold Slope), electron mobility, energy band, surface potential and switching ratio (I_on/I_off) have been performed for the comparison analysis. Further, some important RF figure of merits (FOMs) has been explored and found that the high-k gate stacked SOI-FinFET configuration shows superior RF performance in terms of cut-off frequency (f _T) and maximum oscillation frequency (f _MAX), transconductance frequency product (TFP), gain frequency product (GFP) and gain transconductance frequency product (GTFP). Thus the implementation of a high-k gate stack, the major limitations of our transistor device such as short channel effects (SCEs), leakage current, and parasitic capacitance have been reduced and pave the way for high switching and RF application.

这项工作探讨了高 k 栅极堆叠在 9 nm 绝缘体上硅 (SOI) FinFET 的模拟和射频品质因数 (FOM) 上的性能评估。通过在栅极和鳍之间用 SiO ₂材料替换高 k 电介质，已经观察到结果。本次探索中研究的电介质是二氧化硅 (SiO ₂ )、氮化硅 (Si ₃ N ₄ )、二氧化铪 (HfO ₂ ) 和氧化铝 (Al ₂ O ₃ )。DIBL（Drain Induced Barrier Lowering）、SS（亚阈值斜率）、电子迁移率、能带、表面电位和开关比（I _on /I _{off）等特性}) 进行了比较分析。此外，已经探索了一些重要的射频品质因数 (FOM)，发现高 k 栅极堆叠 SOI-FinFET 配置在截止频率 ( f _T ) 和最大振荡频率 ( f _MAX )方面显示出卓越的射频性能、跨导频率积（TFP）、增益频率积（GFP）和增益跨导频率积（GTFP）。因此，高 k 栅极堆叠的实现，我们的晶体管器件的主要限制，如短沟道效应 (SCE)、漏电流和寄生电容已经减少，并为高开关和 RF 应用铺平了道路。