ABSTRACT

Flaky Cu (f-Cu) particles with surface modification by polystyrene (PS) coating layer were incorporated into poly(vinylidene fluoride) (PVDF), to obtain high dielectric constant (k) and thermal conductivity (TC) but low dielectric loss polymer composites. The results confirm the formation of a layer PS shell outside of the f-Cu, and indicate that the PVDF composites with f-Cu@PS particles exhibit superior dielectric properties compared with pristine f-Cu/PVDF. The improved dielectric performance can be attributed to the insulating PS interlayer preventing the f-Cu from direct contact with each other and meanwhile hindering the long-range electron migration. The dielectric properties of composites can be tuned through finely tailoring the PS shell’ thickness. Additionally, the f-Cu@PS/PVDF composites display slightly higher TC than the raw f-Cu/PVDF, owing to the suppressed thermal interfacial resistance and improved interfacial compatibility between the fillers and matrix. The obtained f-Cu@PS/PVDF composites with enhanced high-k and TC but low loss are promising materials for potential applications in microelectronic and electrical industries.

摘要

将经聚苯乙烯（PS）涂层表面改性的片状Cu（f -Cu）颗粒掺入聚偏二氟乙烯（PVDF）中，以获得高介电常数（k）和导热率（TC）但介电损耗低的聚合物复合材料。结果证实了在f -Cu外部形成了PS壳层，并表明与f -Cu / PVDF相比，具有f -Cu @ PS颗粒的PVDF复合材料表现出优异的介电性能。该改进的介电性能可以归因于所述绝缘层间PS防止˚F-Cu彼此直接接触，同时阻碍远距离电子迁移。可以通过精细调整PS外壳的厚度来调整复合材料的介电性能。另外，由于抑制了热界面阻力和改善了填料与基体之间的界面相容性，f -Cu @ PS / PVDF复合材料的TC略高于原始f -Cu / PVDF。获得的具有高k和TC但低损耗的f -Cu @ PS / PVDF复合材料是有希望在微电子和电气工业中应用的材料。