This work investigates the interface properties of intrinsic hydrogenated amorphous silicon film passivated wafers that underwent hydrogen plasma cleaning. A high level of interface band bending of nearly −0.6 eV, which corresponds to a fixed charge of −2.2 × 10¹² cm⁻², is found to be responsible for an effective minority carrier lifetime of over 6 ms on the 4.5 Ω cm n‐type wafer, while such field‐effect passivation is missing in hydrofluoric acid (HF) cleaned wafers. Further study indicates a positive correlation between the extent of surface band bending and doping concentration, together with an inverted U‐shape with respect to the increased annealing condition. The fixed charge on p‐type wafer is found to have a higher “formation energy” compared with the n‐type case, which renders its field‐effect passivation much less effective due to H effusion at high annealing temperatures. With reference to the theory on donor/acceptor‐H complex upon H plasma treatment, the origin and observed properties of the surface band bending on both dopant types are discussed. The unique presence of field effect on hydrogen plasma cleaned n‐type wafers can provide new insights into passivation material selection and structural design of heterojunction silicon wafer solar cells.

中文翻译：

---

由美国无线电公司氢等离子体蚀刻在结晶硅晶片上形成化学氧化物形成的场效应钝化的研究

这项工作研究了经过氢等离子体清洗的本征氢化非晶硅膜钝化晶片的界面特性。接近-0.6 eV的高界面带弯曲度，对应于-2.2×10 ¹²  cm ^-2的固定电荷发现在4.5Ωcm n型晶片上，有效的少数载流子寿命超过6 ms起作用，而在氢氟酸（HF）清洗过的晶片上缺少这种场效应钝化。进一步的研究表明，表面带弯曲程度和掺杂浓度之间呈正相关，并且相对于增加的退火条件而言呈倒U形。与n型情况相比，发现p型晶片上的固定电荷具有更高的“形成能”，由于高退火温度下的H注入，使其场效应钝化的效率大大降低。参照氢等离子体处理后的供体/受体-H络合物的理论，讨论了两种掺杂剂表面带弯曲的起源和观察到的性质。