In this work, a continuous and symmetric trans-capacitance compact model for triple-gate junctionless MOSFETs is presented, valid in all regions of operation. Initially, the expressions of the gate, drain and source total charges are analytically derived based on a continuous and symmetric drain current compact model already developed. Then, the intrinsic capacitances are calculated via the differentiation of the terminal charges, verified against TCAD simulation data. The AC symmetry tests of the trans-capacitance compact model are thoroughly investigated.

中文翻译：

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三栅极无结MOSFET的连续且对称的跨电容紧凑模型

在这项工作中，提出了一种用于三栅极无结MOSFET的连续且对称的跨电容紧凑模型，该模型在所有工作区域均有效。最初，栅极，漏极和源极总电荷的表达式是基于已经建立的连续且对称的漏极电流紧凑模型解析得出的。然后，通过端电荷的微分计算本征电容，并针对TCAD仿真数据进行验证。对跨电容紧凑模型的交流对称性测试进行了深入研究。