In this paper, the forward bias conduction and low frequency noise (LFN) characteristics of GaN Schottky barrier diodes (SBDs) have been measured and studied in the temperature range from 300 K to 450 K. Based on I–V measured results, the temperature dependence of ideality factor and zero bias Schottky barrier height reveals the inhomogeneities of Schottky barriers at the metal-semiconductor (MS) interface. Further study of the LFN measured results shows that the flicker noise (1/f noise) is the main component of LFN in GaN SBDs. The current dependence of LFN indicates the influences of the Schottky barrier and the series resistance on 1/f noise, and the temperature dependence of LFN is analyzed according to Luo’s model and the barrier inhomogeneities model.

中文翻译：

---

GaN肖特基势垒二极管中传导和低频噪声特性的温度依赖性

本文在 300 K 到 450 K 的温度范围内测量和研究了 GaN 肖特基势垒二极管 (SBD) 的正向偏置传导和低频噪声 (LFN) 特性。根据 I-V 测量结果，温度理想因子和零偏置肖特基势垒高度的相关性揭示了金属 - 半导体（MS）界面处肖特基势垒的不均匀性。对 LFN 测量结果的进一步研究表明，闪烁噪声 (1/F噪声）是 GaN SBD 中 LFN 的主要成分。LFN 的电流依赖性表明肖特基势垒和串联电阻对1/F噪声，并根据罗氏模型和势垒不均匀模型分析了LFN的温度依赖性。