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Electronic and compositional properties of the rear-side of stoichiometric CuInSe2 absorbers
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2020-12-07 , DOI: 10.1002/pip.3380 Christian Kameni Boumenou 1 , Amala Elizabeth 2, 3 , Finn Babbe 1, 4 , Alice Debot 1 , Harry Mönig 2, 3 , Alex Redinger 1
Progress in Photovoltaics ( IF 8.0 ) Pub Date : 2020-12-07 , DOI: 10.1002/pip.3380 Christian Kameni Boumenou 1 , Amala Elizabeth 2, 3 , Finn Babbe 1, 4 , Alice Debot 1 , Harry Mönig 2, 3 , Alex Redinger 1
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In-depth understanding and subsequent optimization of the contact layers in thin film solar cells are of high importance in order to reduce the amount of nonradiative recombination and thereby improve device performance. In this work, the buried MoSe2/CuInSe2 interface of stoichiometric absorbers is investigated with scanning tunneling spectroscopy and Kelvin probe force microscopy combined with compositional measurements acquired via photo-electron spectroscopy after a mechanical lift-off process. We find that the local density of states, as measured with scanning tunneling spectroscopy, is similar to the front-side of ultra-high vacuum annealed CISe absorbers. The grain boundaries exhibit a weak upward band bending, opposite to Cu-poor CuGaSe2, and we measure an increased Cu accumulation at the rear CISe surface compared to the bulk composition and a non-zero concentration of Cu on the Mo-side. Grazing incidence X-ray diffraction measurements corroborate that a small amount of a CuxSe secondary phase is present at the MoSe2/CuInSe2 interface in contrast to reports on Cu-poor material. Our findings shed new light into the complex interface formation of CuInSe2-based thin film solar cells grown under Cu-rich conditions.
中文翻译：
化学计量的 CuInSe2 吸收体背面的电子和成分特性
对薄膜太阳能电池中接触层的深入了解和后续优化对于减少非辐射复合量并从而提高器件性能非常重要。在这项工作中，通过扫描隧道光谱和开尔文探针力显微镜结合机械剥离过程后通过光电子光谱获得的成分测量，研究了化学计量吸收剂的掩埋 MoSe 2 /CuInSe 2界面。我们发现，用扫描隧道光谱测量的局部态密度类似于超高真空退火 CISe 吸收器的正面。晶界表现出弱的向上带弯曲，与贫铜的 CuGaSe 2相反，并且我们测量了与整体成分和 Mo 侧非零浓度的 Cu 相比，后 CISe 表面的 Cu 积累增加。掠入射 X 射线衍射测量证实，与贫铜材料的报道相反，MoSe 2 /CuInSe 2界面处存在少量 Cu x Se 次生相。我们的发现为在富铜条件下生长的基于CuInSe 2的薄膜太阳能电池的复杂界面形成提供了新的线索。
更新日期：2020-12-07
中文翻译：
化学计量的 CuInSe2 吸收体背面的电子和成分特性
对薄膜太阳能电池中接触层的深入了解和后续优化对于减少非辐射复合量并从而提高器件性能非常重要。在这项工作中，通过扫描隧道光谱和开尔文探针力显微镜结合机械剥离过程后通过光电子光谱获得的成分测量，研究了化学计量吸收剂的掩埋 MoSe 2 /CuInSe 2界面。我们发现，用扫描隧道光谱测量的局部态密度类似于超高真空退火 CISe 吸收器的正面。晶界表现出弱的向上带弯曲，与贫铜的 CuGaSe 2相反，并且我们测量了与整体成分和 Mo 侧非零浓度的 Cu 相比，后 CISe 表面的 Cu 积累增加。掠入射 X 射线衍射测量证实，与贫铜材料的报道相反，MoSe 2 /CuInSe 2界面处存在少量 Cu x Se 次生相。我们的发现为在富铜条件下生长的基于CuInSe 2的薄膜太阳能电池的复杂界面形成提供了新的线索。
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