Abstract The effect of crosslinking temperature on charge transport behavior in crosslinked polyethylene (XLPE) film has been investigated by means of surface potential decay measurements. 200 μm-thick XLPE specimens were prepared by hot-molding low density polyethylene (LDPE) by adding dicumyl peroxide (DCP) as crosslinking agent and phenolic antioxidant with temperatures ranging from 150 to 180 °C. Surface potentials on corona-charged samples were monitored by using a Kelvin type probe equipped with an electrostatic voltmeter, based on which trap distribution, effective charge mobility and field dependent conductivity were estimated. Fourier Transform Infrared (FTIR) spectrum and Differential Scanning Calorimeter (DSC) analysis were employed to examine the change in chemical structure and crystal morphology of test samples. Results obtained show that the charge transport dynamics is cross-linking temperature and polarity dependent. With the rise of the crosslinking temperature, the mobility of positive charge increases monotonously from 1.05 × 10−16 m2V−1s−1 to 5.42 × 10−15 m2V−1s−1, whereas the mobility of negative charge shows a fall-and-rise tendency that a minimum value of 1 × 10−16 m2V−1s−1 appears at 160 °C. A single trap center for electron is observed at any test sample. However, as regards to hole, a double-trap-center feature tends to appear as the temperature exceeds 160 °C. Moreover, with the increase of the crosslinking temperature, the conductivity of sample becomes field dependent. It is suggested that the variation of charge transport behavior should be ascribed to the presence of by-products as well as the crystallinity change caused by the temperature.

中文翻译：

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从表面电位衰减测量推导出 XLPE 薄膜中电荷传输行为的交联温度依赖性

摘要 通过表面电位衰减测量研究了交联温度对交联聚乙烯 (XLPE) 膜中电荷传输行为的影响。通过添加过氧化二枯基（DCP）作为交联剂和酚类抗氧化剂，在 150 至 180 °C 的温度范围内，通过热成型低密度聚乙烯（LDPE）制备 200 μm 厚的 XLPE 试样。电晕带电样品的表面电位通过使用配备静电电压计的开尔文型探针进行监测，基于此估计陷阱分布、有效电荷迁移率和场相关电导率。采用傅里叶变换红外 (FTIR) 光谱和差示扫描量热仪 (DSC) 分析来检查测试样品的化学结构和晶体形态的变化。获得的结果表明电荷传输动力学与交联温度和极性有关。随着交联温度的升高，正电荷的迁移率从 1.05 × 10−16 m2V−1s−1 单调增加到 5.42 × 10−15 m2V−1s−1，而负电荷的迁移率呈下降趋势1 × 10−16 m2V−1s−1 的最小值出现在 160 °C 的上升趋势。在任何测试样品中都可以观察到一个电子陷阱中心。然而，对于孔，当温度超过 160 °C 时，往往会出现双阱中心特征。此外，随着交联温度的升高，样品的电导率变得依赖于场。