Security is a critical aspect in modern circuit design, but research into hardware security at the device level is rare as it requires modification of existing technology nodes. With the increasing challenges facing the semiconductor industry, interest in out-of-the-box security solutions has grown, even if this implies introducing novel materials such as two-dimensional layered semiconductors. Here, we show that high-performance, low-voltage, two-dimensional black phosphorus field-effect transistors (FETs) that have reconfigurable polarities are suitable for hardware security applications. The transistors can be dynamically switched between p-FET and n-FET operation through electrostatic gating and can achieve on–off ratios of 10⁵ and subthreshold swings of 72 mV dec⁻¹ at room temperature. Using the transistors, we create inverters that exhibit gains of 33.3 and are fully functional at a supply voltage of 0.2 V. We also create a security primitive circuit with polymorphic NAND/NOR obfuscation functionality with sub-1-V operation voltages, and the robustness of the polymorphic gate against power supply variations is tested using Monte Carlo simulations.

安全性是现代电路设计中的关键方面，但是在设备级别上对硬件安全性的研究很少，因为它需要修改现有技术节点。随着半导体行业面临的挑战日益增加，对即用型安全解决方案的兴趣也在增长，即使这意味着要引入诸如二维分层半导体之类的新型材料。在这里，我们表明具有可重新配置极性的高性能，低压，二维黑磷场效应晶体管（FET）适用于硬件安全应用。晶体管可以通过静电门控在p-FET和n-FET操作之间动态切换，并可以实现10 ^5的开/关比和72 mV dec ^-1的亚阈值摆幅。在室温下。使用这些晶体管，我们创建了具有33.3增益并在0.2 V电源电压下完全工作的反相器。我们还创建了具有多态NAND / NOR模糊功能且具有低于1V工作电压的安全性本机电路。使用蒙特卡洛模拟测试了多态门对电源变化的影响。