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Relationship between Dielectric Relaxation and the Electronic States at the Grain Boundaries of a Ceramic Ferroelectric Semiconductor
Bulletin of the Russian Academy of Sciences: Physics Pub Date : 2020-12-07 , DOI: 10.3103/s1062873820110118
G. S. Grigoryan , A. M. Solodukha

Abstract

Structural data are presented along with the results from an impedance spectroscopy study of relaxation at temperatures above and below that of the ferroelectric phase transition of polycrystalline barium–strontium titanate doped with cerium and lanthanum in weak electric fields. The results are interpreted and the electrophysical parameters of grain boundaries are determined using the Heywang model.



中文翻译:

陶瓷铁电半导体晶界上介电弛豫与电子态的关系

摘要

给出了结构数据,以及阻抗谱研究的结果,该结果在弱电场中高于和低于掺杂铈和镧的多晶钛酸锶锶钛铁电相变温度下的弛豫。解释结果并使用Heywang模型确定晶界的电物理参数。

更新日期:2020-12-07
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