In this study, we report on a low-cost, highly efficient, and Cd-free Cu (In and Ga) Se₂ (CIGS)-based solar cell for an alternative to conventional CIGS-based solar cells. To maintain the proposed model as close as possible to the real behavior of thin-film solar cells, we produced a device with a p-Si/p-CIGS/In₂S₃/i-ZnO/Al-ZnO structure. The main objective of this study was to reduce the fabrication cost using an ultra-thin CIGS absorber layer with In₂S₃ buffer layer and obtain high performance. The solar cell performance of this proposed device was investigated using a 1D-solar cell capacitance simulator (SCAPS). The simulation was conducted in three stages. First, the cell was optimized by varying the thicknesses of the CIGS absorber and In₂S₃ buffer layer. The optimized structure was simulated at different operating temperatures. In each case, V_oc, J_sc, FF, and the efficiency were calculated.The proposed device had a marked efficiency of ∼26 % with a 0.3 μm thick CIGS absorber layer. Varying the thickness of the In₂S₃ buffer layer had little effect, and as the temperature increased, the cell’s performance showed a downward trend.

在这项研究中，我们报告了一种低成本，高效且不含镉的Cu（In和Ga）Se ₂（CIGS）太阳能电池，可替代常规基于CIGS的太阳能电池。为了使建议的模型尽可能接近薄膜太阳能电池的实际行为，我们生产了一种具有p-Si / p-CIGS / In ₂ S ₃ / i-ZnO / Al-ZnO结构的器件。这项研究的主要目的是通过使用具有In ₂ S ₃的超薄CIGS吸收层来降低制造成本。缓冲层并获得高性能。使用一维太阳能电池电容模拟器（SCAPS）研究了该拟议器件的太阳能电池性能。模拟分三个阶段进行。首先，通过改变CIGS吸收层和In ₂ S ₃缓冲层的厚度来优化电池。在不同的工作温度下模拟了优化的结构。在每种情况下，都计算了V _oc，J _sc，FF和效率。拟议的器件具有0.3μm厚的CIGS吸收层，显着效率约为26％。改变In ₂ S ₃的厚度 缓冲层几乎没有影响，并且随着温度的升高，电池的性能呈下降趋势。