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Gas Nanosensors Made from Semiconductor Metal Oxides
Journal of Contemporary Physics (Armenian Academy of Sciences) ( IF 0.5 ) Pub Date : 2019-12-17 , DOI: 10.3103/S1068337219040054 V. M. Aroutiounian
Journal of Contemporary Physics (Armenian Academy of Sciences) ( IF 0.5 ) Pub Date : 2019-12-17 , DOI: 10.3103/S1068337219040054 V. M. Aroutiounian
Usually semiconductor gas sensors made from metal oxides need in high pre-heating of work body. Advantages for nanoscale sensors are possibilities to work at remarkable lower than 300°C temperature of its work body up to room temperature (practically without pre-heating of the sensor). Todays' experimental results obtained for gas sensors made from metal oxides are reported in this review.
中文翻译:
半导体金属氧化物制成的气体纳米传感器
通常,由金属氧化物制成的半导体气体传感器需要对工件进行高预热。纳米级传感器的优势在于可以在其工作体的明显低于300°C的温度下达到室温(实际上无需预热传感器)。这篇评论报道了当今由金属氧化物制成的气体传感器获得的实验结果。
更新日期:2019-12-17
中文翻译:
半导体金属氧化物制成的气体纳米传感器
通常,由金属氧化物制成的半导体气体传感器需要对工件进行高预热。纳米级传感器的优势在于可以在其工作体的明显低于300°C的温度下达到室温(实际上无需预热传感器)。这篇评论报道了当今由金属氧化物制成的气体传感器获得的实验结果。