The bulk (crystal-chemical and structural) and surface (acid base) properties of InB^V–ZnS semiconductor solid solutions with different A^III–B^V (InP and InAs) binary components are investigated under identical conditions. The regularities of the variation in the investigated properties with composition, which are generally statistical (smooth) for the InP–ZnS system and have extrema for the InAs–ZnS system, are established. The initial (air-exposed) surfaces of the solid solutions, as the surfaces of the binary components of the systems, are weakly acidic (pH_iso < 7), which allows us to state their high activity with respect to the main gases. Considerations concerning the nature of active (acid base) sites are presented and confirmed. The interrelation between the surface and bulk properties of the solid solutions is established, which offers opportunities for the prediction and inexpensive search for advanced high-efficiency materials for the semiconductor-gas analysis without time-consuming investigations of the surface properties.

中文翻译：

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InB ^V –ZnS半导体固溶体的体积和表面性质比较

在相同条件下研究了具有不同A ^III -B ^V（InP和InAs）二元组分的InB ^V -ZnS半导体固溶体的整体（晶体化学和结构）和表面（酸碱）性质。建立了所研究性质随组成的变化规律，对于InP-ZnS系统通常是统计（平稳）​​的，而对于InAs-ZnS系统则具有极值。初始（空气暴露）表面的固溶体，作为系统的二进制部件的表面，是弱酸性（pH为_异<7），这使我们能够陈述它们相对于主要气体的高活性。提出并确认了有关活性（酸碱）位点性质的考虑因素。建立了固溶体的表面性质与本体性质之间的相互关系，这为预测和廉价地寻找用于半导体气体分析的高级高效材料提供了机会，而无需花费大量时间进行表面性质的研究。