The results of studies of the surface morphology, electrical characteristics, and photoluminescence properties of epitaxial GaAs films grown by molecular-beam epitaxy on GaAs(110) substrates and doped with Si are reported. A series of samples is grown at a temperature of 580°C with the arsenic/gallium flow ratio in the range from 14 to 80. By analyzing the photoluminescence spectra of the samples, the behavior of Si atoms in GaAs is interpreted with consideration for the occupation of Ga or As sites by Si atoms (i.e., for the formation of SiGa and SiAs point defects) and the formation of vacancies of arsenic and gallium V _As and V _Ga. In the analysis, the photoluminescence spectra of the samples on (110)-oriented substrates are compared with the photoluminescence spectra of similar samples on (100)- and (111)A-oriented substrates.

中文翻译：

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GaAs（110）衬底上生长的掺硅外延膜：表面形貌，电特性和光致发光光谱

报道了通过分子束外延在GaAs（110）衬底上掺杂Si的外延GaAs薄膜的表面形貌，电学特性和光致发光特性的研究结果。在580°C的温度下生长一系列样品，砷/镓的流量比在14至80范围内。通过分析样品的光致发光光谱，可以解释GaAs中Si原子的行为。 Si原子占据Ga或As位点（即用于形成SiGa和SiAs点缺陷）以及形成砷和镓的空位 V _As和 V _Ga。在分析中，将（110）取向的基板上样品的光致发光光谱与（100）和（111）A取向的基板上类似样品的光致发光光谱进行了比较。