Scattering of electrons and holes by a system of deep impurities in gallium arsenide-based semiconductor heterostructures with two quantum wells in the approximation of a maximally localized potential at an arbitrary doping profile has been studied. It is shown that the dependences of the probabilities of electron and hole scattering per unit time on the carrier energy repeat a threshold form of the density states of size quantization subbands of a heterostructure with allowance for the contribution of the integral of overlap of the carrier wave functions. For the hole subbands with the negative effective mass, the probabilities of scattering at the subband edges per unit time have singularities typical of one-dimensional systems.

中文翻译：

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带有量子阱的半导体异质结构中深杂质对电子和空穴的散射

研究了在具有两个量子阱的砷化镓基半导体异质结构中，深杂质系统对电子和空穴的散射，在任意掺杂分布下，其最大局限电势近似。结果表明，每单位时间电子和空穴散射概率对载流子能量的依赖性重复了异质结构尺寸量化子带密度状态的阈值形式，并考虑了载流子的重叠积分的贡献。职能。对于具有负有效质量的空穴子带，每单位时间在子带边缘散射的概率具有一维系统的典型奇点。