In this work, the effect of annealing on the electrical and optical properties of electro-deposited [Formula: see text]-type cuprous oxide was studied in detail. It is found that the flat band potential linearly increased with annealing temperature and the carrier concentration was improved from 6.56 × 10[Formula: see text] cm[Formula: see text] to 23.3 × 10[Formula: see text] cm[Formula: see text]. The photocurrent intensity of cuprous oxide was improved from 12.1 [Formula: see text]A to 106.6 [Formula: see text]A after annealing. The dramatically improved electrical and photoelectrical properties might be ascribed to the highly improved crystallinity and the lower surface defect density caused by annealing.

中文翻译：

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电沉积p型氧化亚铜的电学和光电性能得到极大改善

本工作详细研究了退火对电沉积[分子式：见正文]型氧化亚铜电学和光学性能的影响。发现平带电位随退火温度线性增加，载流子浓度从6.56×10[公式：见文] cm[公式：见文]提高到23.3×10[公式：见文]cm[公式：见正文]。退火后氧化亚铜的光电流强度从12.1[公式：见正文]A提高到106.6[公式：见正文]A。显着改善的电学和光电性能可能归因于高度改善的结晶度和退火引起的较低表面缺陷密度。