The electrical properties of vertical GaN trench MOSFETs without drift layers were evaluated to investigate the effect of nitrogen plasma treatment on the trench sidewalls. It is demonstrated that nitrogen plasma treatment improves the channel property of the vertical GaN trench MOSFET. The possible mechanism of this improvement is the supply of nitrogen atoms from nitrogen plasma treatment to the trench surfaces, and the compensation of the nitrogen vacancies near the trench surfaces by the nitrogen atoms during gate oxide annealing. The temperature dependence and the limiting factors of the channel property are also discussed.

中文翻译：

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通过氮等离子体处理补偿氮空位改善 GaN 垂直沟槽 MOSFET 的沟道特性

评估没有漂移层的垂直 GaN 沟槽 MOSFET 的电气特性，以研究氮等离子体处理对沟槽侧壁的影响。结果表明，氮等离子体处理改善了垂直 GaN 沟槽 MOSFET 的沟道特性。这种改进的可能机制是氮等离子处理向沟槽表面提供氮原子，以及在栅极氧化物退火过程中氮原子补偿沟槽表面附近的氮空位。还讨论了温度依赖性和通道特性的限制因素。