Abstract Thin films of lead sulphide (PbS) were grown on the Si (100) and glass substrates using the simple chemical bath deposition (CBD) method. The prepared films had the cubic structure at room temperature, and the thickness was 350 nm at a 120 min deposition time. In this work, the effect of low-dose rate gamma irradiation on the structural and optical characteristics of the prepared thin films was investigated. The PbS thin films were exposed at the National SSDL (Secondary Standard Dosimetry Laboratory) using gamma beam emitted from Co-60 source, the average energy of the photon beam was 1.25 MeV. Here, four different doses (1, 2, 3 and 4 kGy) were used and the dose rate was about 380 mGy/min. The changes on the optical and structural properties of the PbS films due to the gamma irradiation were evaluated. The results showed that the intensity of photoluminescence PL and the grain size decreased with increasing the radiation dose. This could be related to the changes in the crystalline structural during the experiment. In addition, the band gap obtained by the UV transmittance spectrum was confirmed with the results of XRD. These results could indicate the potential application for PbS film in microelectronic field.

中文翻译：

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低剂量率 Co-60 γ 辐照对 PbS 薄膜的结构和光学效应

摘要 使用简单的化学浴沉积 (CBD) 方法在 Si (100) 和玻璃基板上生长硫化铅 (PbS) 薄膜。制备的薄膜在室温下具有立方结构，沉积时间为 120 分钟时厚度为 350 nm。在这项工作中，研究了低剂量率伽马辐射对制备的薄膜结构和光学特性的影响。PbS 薄膜在国家 SSDL（二级标准剂量学实验室）使用 Co-60 源发射的伽马束曝光，光子束的平均能量为 1.25 MeV。这里使用了四种不同的剂量（1、2、3 和 4 kGy），剂量率约为 380 mGy/min。评估了由于伽马辐射引起的 PbS 薄膜的光学和结构特性的变化。结果表明，光致发光强度和晶粒尺寸随着辐射剂量的增加而减小。这可能与实验过程中晶体结构的变化有关。另外，由UV透射光谱得到的带隙由XRD的结果确认。这些结果表明 PbS 薄膜在微电子领域的潜在应用。