This work presents filter applications of carbon nanotube field effect transistors (CNTFET) voltage differencing buffered amplifier (VDBA) based high frequency universal filters using 32 nm CNTFET technology of Stanford University model. CNTFETs are potential candidates to replace conventional silicon-based transistors due to their exceptional material properties. In addition, by changing chirality of carbon nanotube (CNT), the material property can be easily changed from semiconducting material to metallic. The VDBA is an active element of circuit which has high input impedance and low output impedance. These types of blocks provide an advantage for voltage mode circuits allowing cascadability and no critical component matching. The proposed CNTFET VDBA shows much higher frequency response with about 67 GHz at first stage which is well known OTA block and around 30 GHz at second stage, power consumption around 135 times less than 0.35 μm TSMC technology and 2476 times reduction in active area of chip. HSPICE and MATLAB simulation tools are used to perform all simulations.

这项工作展示了使用斯坦福大学模型的32 nm CNTFET技术的基于碳纳米管场效应晶体管（CNTFET）压差缓冲放大器（VDBA）的高频通用滤波器的滤波器应用。CNTFET具有非凡的材料性能，因此它们有望替代传统的硅基晶体管。另外，通过改变碳纳米管（CNT）的手性，可以容易地将材料特性从半导体材料改变为金属材料。VDBA是电路的有源元件，具有高输入阻抗和低输出阻抗。这些类型的模块为电压模式电路提供了优势，允许级联并且没有关键的组件匹配。拟议中的CNTFET VDBA在第一阶段显示出更高的频率响应，众所周知的OTA块约为67 GHz，在第二阶段约为30 GHz，功耗比0.35μmTSMC技术低135倍，芯片有效面积减少了2476倍。HSPICE和MATLAB仿真工具用于执行所有仿真。