Abstract. Numerical model was developed to analyze photovoltaic parameters according to electronic properties of InGaN/GaN multiple quantum well solar cell (MQWSC) under hydrostatic pressure. Finite difference method was used to acquire energy eigenvalues and their corresponding eigenfunctions of InGaN/GaN MQWSC and hole eigenstates were calculated using a 6 × 6 k.p method under an applied hydrostatic pressure. Our results show that depth of quantum wells, bandgaps, band offset, electron, and hole density increase with the increase in the hydrostatic pressure. Also as pressure was increased, electron and hole wave functions had less overlap, amplitude of absorption coefficient was increased, and binding energy of excitons was decreased. A change in pressure of up to 10 GPa caused absorption coefficient’s peaks of light and heavy holes to shift to low wavelengths of up to 32 nm, along with decreased current density of short circuit, increased open circuit voltage, and enhanced efficiency of InGaN/GaN MQWSC.

中文翻译：

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InGaN/GaN多量子阱太阳能电池电子和电学特性的数值模拟

摘要。根据 InGaN/GaN 多量子阱太阳能电池 (MQWSC) 在静水压力下的电子特性，开发了数值模型来分析光伏参数。有限差分法用于获取能量特征值，并在施加的静水压力下使用 6 × 6 kp 方法计算 InGaN/GaN MQWSC 和空穴本征态的相应特征函数。我们的结果表明，量子阱的深度、带隙、带偏移、电子和空穴密度随着流体静压的增加而增加。同样随着压力的增加，电子和空穴波函数的重叠减少，吸收系数的幅度增加，激子的结合能降低。