An anti-parallel (AP) diode pair based on a Fermi-level managed barrier (FMB) diode was developed for the sub-harmonic mixing of terahertz waves. A quasi-optical module integrating an AP–FMB diode pair and a trans-impedance amplifier exhibited a very low noise-equivalent-power of 9 × 10 ⁻¹⁹ W/Hz at an input signal frequency of 304 GHz with a very low local oscillator power of 30 μW.

中文翻译：

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费米级可控势垒二极管在300 GHz频段内的低本地振荡器功率次谐波混合

开发了一种基于费米能级可控势垒（FMB）二极管的反并联（AP）二极管对，用于太赫兹波的次谐波混合。集成了AP–FMB二极管对和跨阻放大器的准光模块在304 GHz输入信号频率下具有非常低的本地振荡器，其噪声等效功率非常低，^仅为9×10 ^-19 W / Hz。功率为30μW。