A reverse conducting (RC) insulated gate bipolar transistor (IGBT) with p-float and n-ring surrounding trench-collector is proposed. The p-floats surrounding sidewalls of trench-collectors suppress snapback and also avoid snapback when there are semiconductor/trench-collector interface charges ( Q _f ). The n-rings surrounding the top of the trench-collectors speed up the forward recovery and ensure a high breakdown voltage. Technology computer aided design (TCAD) simulations are carried out to compare the proposed RC-IGBT and the RC-IGBT with p-poly trench-collector (PTC RC-IGBT). With Q _f = 1 × 10 ¹¹ cm ⁻² , the proposed RC-IGBT is snapback-free while the PTC RC-IGBT has a snapback voltage of 4.43 V. The peak forward recovery voltage of the proposed RC-IGBT (12 V) is much lower than that of the PTC RC-IGBT (246 V). Besides, the reverse recovery charge of the two RC-IGBTs is 48% lower than that of the PiN diode.

中文翻译：

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带有p型浮置和n形环的沟槽收集器的无反冲反向导通IGBT

提出了一种反向导电（RC）绝缘栅双极晶体管（IGBT），该晶体管具有p浮置和n环围绕沟槽集电极。沟槽-集电极侧壁周围的p浮子抑制了回跳，并且在存在半导体/沟槽-集电极界面电荷时避免了回跳（ 问 _f ）。围绕沟槽集电极顶部的n形环加快了正向恢复速度，并确保了高击穿电压。进行了技术计算机辅助设计（TCAD）仿真，以比较建议的RC-IGBT和带p-poly沟槽集电极（PTC RC-IGBT）的RC-IGBT。用问 _f = 1×10 ¹¹ cm ^-2 ，建议的RC-IGBT是无回跳的，而PTC RC-IGBT的回跳电压为4.43V。建议的RC-IGBT的峰值正向恢复电压（12 V）很大。低于PTC RC-IGBT（246 V）。此外，两个RC-IGBT的反向恢复电荷比PiN二极管低48％。