In this article, the effect of MoS₂ and ZnO blend ratio on the performance of MoS₂:ZnO hybrid photodiodes is investigated. The UV and visible performance parameters for five different devices consisting of semiconducting layers like MoS₂, ZnO, MoS₂:ZnO (1:1), MoS₂:ZnO (1:2), and MoS₂:ZnO (2:1) each are analyzed. The device MoS₂:ZnO (1:2) shows the best performance in the UV region with a responsivity of 17.04 A/W, detectivity of $6.84\times 10 ^{\mathbf {13}}$ Jones and external quantum efficiency (EQE) of 6604% at 320nm, −1 V bias. On the other hand, the device MoS₂:ZnO (2:1) gives the best performance in the visible region with a responsivity of 2.27 A/W, detectivity of $0.60\times 10 ^{\mathbf {13}}$ Jones, and EQE of 533% at 529nm, −1 V.

中文翻译：

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用于增强光电检测的 MoS2/ZnO 混合纳米结构的制备

在本文中，研究了 MoS ₂和 ZnO 混合比例对 MoS ₂ :ZnO 混合光电二极管性能的影响。由半导体层组成的五种不同器件的紫外和可见光性能参数，如 MoS ₂、ZnO、MoS ₂ :ZnO (1:1)、MoS ₂ :ZnO (1:2) 和 MoS ₂ :ZnO (2:1)一一分析。器件 MoS ₂ :ZnO (1:2) 在紫外区域显示出最佳性能，响应率为 17.04 A/W，检测率为 $6.84\times 10 ^{\mathbf {13}}$ Jones 和外部量子效率 (EQE) 在 320nm、-1 V 偏置下为 6604%。另一方面，MoS ₂ :ZnO (2:1)器件在可见光区域提供最佳性能，响应率为 2.27 A/W，检测率为 $0.60\times 10 ^{\mathbf {13}}$ Jones 和 EQE 在 529nm、−1 V 处为 533%。