Diamond Schottky p-i-n diodes have been grown by plasma-enhanced chemical vapor deposition (PECVD) and incorporated as a shunt element within coplanar striplines for RF characterization. The p-i-n diodes have a thin, lightly doped n-type layer that is fully depleted by the top metal contact, and they operate as high-speed Schottky rectifiers. Measurements from dc to 25 GHz confirm that the diodes can be modeled by a voltage-dependent resistor in parallel with a fixed-value capacitor. In the OFF state with a dc bias of 0 V, the diode insertion loss is less than 0.3 dB at 1 GHz and increases to 14 dB when forward biased to 7.6 V. With a contact resistance, $R_{C}$ , of 0.25 $\text{m}\Omega \cdot $ cm² and an OFF capacitance, $C_{\mathrm{\scriptscriptstyle OFF}}$ , of 17.5 nF/cm², the diodes have an RF figure of merit $F_{\mathrm {oc}} =$ ( $2\pi R_{C}\,\,C_{\mathrm{\scriptscriptstyle OFF}})^{-1}$ of 36.5 GHz. The RF model suggests that reducing $R_{C}$ to less than $5\times 10^{-5} \Omega \cdot $ cm² will enable input power rejection exceeding 30 dB. Compared to conventional silicon or compound semiconductor based power limiters, the superior thermal conductivity of the diamond Schottky p-i-n diodes makes them ideally suitable for RF receiver protectors (RPs) that require high power handing capability.

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用于接收器保护器应用的金刚石肖特基引脚二极管的射频特性

金刚石肖特基 pin 二极管已通过等离子体增强化学气相沉积 (PECVD) 生长，并作为分流元件纳入共面带状线以进行射频表征。pin 二极管有一个薄的、轻掺杂的 n 型层，它被顶部金属触点完全耗尽，它们作为高速肖特基整流器工作。从直流到 25 GHz 的测量证实，二极管可以通过与固定值电容器并联的电压相关电阻器建模。在直流偏置为 0 V 的关断状态下，二极管插入损耗在 1 GHz 时小于 0.3 dB，在正向偏置至 7.6 V 时增加到 14 dB。 $R_{C}$ , 0.25 $\text{m}\Omega \cdot $ cm ²和一个截止电容， $C_{\mathrm{\scriptscriptstyle OFF}}$ , 17.5 nF/cm ²，二极管具有射频品质因数 $F_{\mathrm {oc}} =$ ( $2\pi R_{C}\,\,C_{\mathrm{\scriptscriptstyle OFF}})^{-1}$ 36.5 GHz。RF 模型表明，减少 $R_{C}$ 小于 $5\times 10^{-5} \Omega \cdot $ cm ²将使输入功率抑制超过 30 dB。与传统的基于硅或化合物半导体的功率限制器相比，金刚石肖特基 pin 二极管卓越的导热性使其非常适合需要高功率处理能力的 RF 接收器保护器 (RP)。