A novel and fast method for the measurement-based identification of an analytical field-effect transistor (FET) compact model from large-signal waveforms is presented. Based on a two-tone two-port experiment, a recently published nonlinear function sampling (NFS) operator providing the samples of the FET state functions in the voltage domain is here exploited, for the first time, to extract an equivalent-circuit model. The approach is demonstrated on a 250-nm gallium nitride (GaN)-on-silicon carbide (SiC) high-electron-mobility transistor (HEMT) at 2.5 and 5 GHz.

中文翻译：

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使用非线性函数采样方法的基于测量的 FET 分析建模

提出了一种基于测量识别大信号波形分析场效应晶体管 (FET) 紧凑模型的新型快速方法。基于双音双端口实验，这里首次利用最近发布的非线性函数采样 (NFS) 算子提供电压域中的 FET 状态函数样本，以提取等效电路模型。该方法在 250 纳米氮化镓 (GaN) 碳化硅 (SiC) 高电子迁移率晶体管 (HEMT) 上在 2.5 和 5 GHz 上进行了演示。