In the current study, the electrical behavior of the AlGaN/GaN high electron mobility transistors (HEMTs) grown with an underlying GaN:Mg layer is detailed. It is shown that the activation of the buried p-GaN layer is achieved without hydrogen diffusion out of the layer. Reversal in the electrical behavior of the two-dimensional electron gas (2DEG) is also observed in the as-grown structure based on the p-GaN activation sequence. This behavior is attributed to the complex role played by hydrogen in the overgrown HEMT layers. The results of this study provide new insights into the development of metal organic chemical vapor deposition grown HEMTs with activated buried p-GaN films.

中文翻译：

---

用下面的 GaN:Mg 层生长的 AlGaN/GaN 高电子迁移率晶体管的电学行为研究

在当前的研究中，详细介绍了使用底层 GaN:Mg 层生长的 AlGaN/GaN 高电子迁移率晶体管 (HEMT) 的电学行为。结果表明，掩埋 p-GaN 层的激活是在没有氢扩散出层的情况下实现的。在基于 p-GaN 激活序列的生长结构中也观察到二维电子气 (2DEG) 电学行为的逆转。这种行为归因于氢在过度生长的 HEMT 层中扮演的复杂角色。这项研究的结果为开发具有活化掩埋 p-GaN 薄膜的金属有机化学气相沉积生长的 HEMT 提供了新的见解。