In this study, we investigate the effect of ion irradiation on Y0.95Ca0.05MnO3 (YCMO) thin films. X-ray diffraction and Raman spectroscopy measurements show single-phase and strain/stress modifications with ion irradiation. Rutherford backscattering spectrometry confirms the variation in oxygen vacancies. The near-edge x-ray absorption fine structure shows valence state reduction of Mn ions, which is attributed to oxygen vacancies. The optimal resistive switching ratio is observed at the lowest fluence (1 × 1011 ions/cm2) of ion irradiation. At higher fluences (1 × 1012 and 1 × 1013 ions/cm2), the strain relaxation and oxygen vacancy annihilation are ascribed to the local annealing effect. The double logarithmic curve and modified Langmuir–Child's law satisfy the space charge limited conduction mechanism in all thin films. These results suggest the crucial role of irradiation-induced oxygen vacancies in modifying the electronic structure and electrical properties of YCMO thin films.

中文翻译：

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氧空位梯度对离子辐照Ca掺杂YMnO3薄膜的影响

在这项研究中，我们研究了离子辐照对 Y0.95Ca0.05MnO3 (YCMO) 薄膜的影响。X 射线衍射和拉曼光谱测量显示了离子辐照的单相和应变/应力修改。卢瑟福背散射光谱法证实了氧空位的变化。近边 X 射线吸收精细结构显示 Mn 离子的价态还原，这归因于氧空位。在离子辐照的最低通量 (1 × 1011 离子/cm2) 下观察到最佳电阻转换比。在更高的通量（1 × 1012 和 1 × 1013 离子/cm2）下，应变弛豫和氧空位湮灭归因于局部退火效应。双对数曲线和修正的朗缪尔-柴尔德定律满足所有薄膜中空间电荷限制的传导机制。