AlGaN in the form of nanowires is an important platform for semiconductor ultraviolet light sources on Si. In the past, significant efforts have been devoted to improving the quality of AlGaN nanowires. In this context, we present a comparative study on the molecular beam epitaxial growth and characterization of AlGaN nanowire structures on the AlN buffer layer on Si and on Si directly. It is found that AlGaN nanowires grown on the AlN buffer layer shows an improved internal quantum efficiency, compared with the nanowires grown on Si directly. This improvement is attributed to the reduced nanowire coalescence due to the improved vertical alignment of the nanowires grown on the AlN buffer layer.

中文翻译：

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AlN缓冲层和Si上AlGaN纳米线结构的分子束外延生长和表征的比较研究

纳米线形式的 AlGaN 是 Si 上半导体紫外光源的重要平台。过去，大量努力致力于提高 AlGaN 纳米线的质量。在这种情况下，我们对在 Si 上的 AlN 缓冲层和直接在 Si 上的 AlGaN 纳米线结构的分子束外延生长和表征进行了比较研究。结果表明，与直接在 Si 上生长的纳米线相比，在 AlN 缓冲层上生长的 AlGaN 纳米线显示出​​更高的内量子效率。这种改进归因于由于在 AlN 缓冲层上生长的纳米线的垂直排列得到改善而减少的纳米线聚结。