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New Order in (BiS)1.19(Bi1/3Cr2S4) Misfit Layer Compound.
Zeitschrift für anorganische und allgemeine Chemie ( IF 1.1 ) Pub Date : 2020-12-04 , DOI: 10.1002/zaac.202000379
A. Gómez‐Herrero 1 , A. R. Landa‐Cánovas 2 , L. C. Otero‐Díaz 3
Affiliation  

In a sample with nominal composition BiCr2S5 a new misfit layer compound has been synthesized and studied via transmission electron microscopy (TEM). It presents a composite modulated structure with a composition that can be formulated as (BiS)1.19[(CrS2)‐Bi1/3‐(CrS2)]. It consists of the periodic stacking of a Q layer (BiS) with two H layers (CrS2), …QHHQHH…, with additional bismuth atoms inserted between the H layers. Selected area electron diffraction (SAED) patterns show an almost commensurate fit between the pseudo‐tetragonal Q (BiS) and the pseudo‐orthohexagonal H (Bi1/3Cr2S4) subcells along the misfit direction a, being b the same for both sublattices and c the layers stacking direction. In addition to the characteristic misfit modulation between the two sub‐structures, a second modulation is observed in the H sub‐structure produced by the ordering of bismuth atoms within the Van der Waals gap that occurs between consecutive H layers. High resolution transmission electron microscopy (HRTEM) and scanning transmission electron microscopy (STEM) images show ordered stacking sequences between the (BiS) and (Bi1/3Cr2S4) layers. Besides, disordered intergrowths have been occasionally found as well as different kinds of twinning defects.

中文翻译:

(BiS)1.19(Bi1 / 3Cr2S4)错配层化合物的新订单。

在标称成分为BiCr 2 S 5的样品中,已经合成了一种新的错配层化合物,并通过透射电子显微镜(TEM)进行了研究。它提供了一种复合调制结构,其成分可以表示为(BiS)1.19 [(CrS 2)-Bi 1/ 3- (CrS 2)]。它由Q层(BiS)与两个H层(CrS 2)……QHHQHH…的周期性堆叠组成,在H层之间插入了其他铋原子。选定区域的电子衍射(SAED)模式显示伪四方Q(BiS)和伪正交六方H(Bi 1/3 Cr 2 S 4)沿着错配方向a的像元,对于两个子晶格都是b,而对于层堆叠方向c则c。除了两个子结构之间的特征失配调制以外,在H子结构中还观察到第二个调制,该第二子调制是由连续H层之间发生的范德华间隙中的铋原子排序产生的。高分辨率透射电子显微镜(HRTEM)和扫描透射电子显微镜(STEM)图像显示(BiS)和(Bi 1/3 Cr 2 S 4)图层。此外,偶尔会发现无序的共生以及各种孪生缺陷。
更新日期:2021-02-05
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