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Growth and Characterization of GaN/AlN Resonant Tunneling Diodes for High‐Performance Nonvolatile Memory
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-12-03 , DOI: 10.1002/pssa.202000495 Masanori Nagase 1 , Tokio Takahashi 1 , Mitsuaki Shimizu 1
Physica Status Solidi (A) - Applications and Materials Science Pub Date : 2020-12-03 , DOI: 10.1002/pssa.202000495 Masanori Nagase 1 , Tokio Takahashi 1 , Mitsuaki Shimizu 1
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GaN/AlN resonant tunneling diodes (RTDs) are studied to realize a high‐speed nonvolatile memory based on the intersubband transactions and electron accumulation in the quantum well, which has the potential to operate at picosecond time scales. The crystal quality of GaN/AlN RTDs is improved by changing the growth conditions and structure of the buffer layer. The surface roughness and dislocation density of the GaN/AlN RTDs are successfully suppressed, and clear ON/OFF switching due to intersubband transitions is observed by inputting pulse voltage sequences. However, the voltages for write and erase operations are changed by improving the crystal quality of GaN/AlN RTDs. The theoretical analysis of resonant levels in the GaN/AlN RTDs indicates that the voltages for write and erase operations are very sensitive to the well and barrier widths and the density of electrons accumulating in the quantum well. Based on the results, the design of GaN/AlN RTDs for higher‐performance nonvolatile memory operations is investigated.
中文翻译：
高性能非易失性存储器的GaN / AlN共振隧穿二极管的生长与表征
研究了GaN / AlN共振隧穿二极管（RTD），以基于子带间事务和量子阱中的电子积累来实现高速非易失性存储器，它有可能在皮秒级的时间内工作。GaN / AlN RTD的晶体质量可以通过改变生长条件和缓冲层的结构来提高。成功抑制了GaN / AlN RTD的表面粗糙度和位错密度，并且通过输入脉冲电压序列可以观察到由于子带间跃迁而引起的清晰的ON / OFF切换。然而，用于写入和擦除操作的电压通过改善GaN / AlN RTD的晶体质量而改变。对GaN / AlN RTD中谐振能级的理论分析表明，用于写和擦除操作的电压对阱和势垒宽度以及在量子阱中积累的电子密度非常敏感。根据结果，研究了用于高性能非易失性存储器操作的GaN / AlN RTD设计。
更新日期：2021-02-03
中文翻译：
高性能非易失性存储器的GaN / AlN共振隧穿二极管的生长与表征
研究了GaN / AlN共振隧穿二极管（RTD），以基于子带间事务和量子阱中的电子积累来实现高速非易失性存储器，它有可能在皮秒级的时间内工作。GaN / AlN RTD的晶体质量可以通过改变生长条件和缓冲层的结构来提高。成功抑制了GaN / AlN RTD的表面粗糙度和位错密度，并且通过输入脉冲电压序列可以观察到由于子带间跃迁而引起的清晰的ON / OFF切换。然而，用于写入和擦除操作的电压通过改善GaN / AlN RTD的晶体质量而改变。对GaN / AlN RTD中谐振能级的理论分析表明，用于写和擦除操作的电压对阱和势垒宽度以及在量子阱中积累的电子密度非常敏感。根据结果，研究了用于高性能非易失性存储器操作的GaN / AlN RTD设计。
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