Characterization of a 2D Electron Gas at the Interface of Atomic‐Layer Deposited Al2O3/ZnO Thin Films for a Field‐Effect Transistor,Advanced Electronic Materials

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Characterization of a 2D Electron Gas at the Interface of Atomic‐Layer Deposited Al2O3/ZnO Thin Films for a Field‐Effect Transistor
Advanced Electronic Materials ( IF 5.3 ) Pub Date : 2020-12-04 , DOI: 10.1002/aelm.202000876
Hyun Jae Lee ₁ , Taehwan Moon _{1,

2} , Seung Dam Hyun ₁ , Sukin Kang ₁ , Cheol Seong Hwang ₁

Affiliation

The 2D electron gas (2DEG) phenomenon that occurs at the amorphous thin film hetero‐oxide interface attracts great attention since it can avoid the use of a single‐crystal oxide substrate. In this study, the analysis of 2DEG at the interface of amorphous‐Al₂O₃ (a‐AO)/ZnO is conducted using ZnO as the bottom substrate, where both the oxide films are grown by atomic layer deposition. Having used Al(CH₃)₃ as the Al‐precursor for the a‐AO film growth on the previously grown ZnO film, its strong reducing power induces the 2DEG formation at the interface. As a result of the Hall measurement, the 2DEG at the a‐AO/ZnO interface shows sheet resistance of 2.7 × 10⁴ Ω ▫⁻¹ and Hall mobility of 8.4 cm² V⁻¹ s⁻¹. Using angle‐resolved X‐ray photoelectron spectroscopy, the thickness of the 2DEG layer is calculated as 0.62 nm, which is ≈120% of the c‐axis of the wurtzite ZnO unit cell. The field‐effect transistor fabricated exhibits a threshold voltage of −2.4 V, sub‐threshold swing of 0.33 V dec⁻¹, and on/off ratio of 9.4 × 10⁶, which significantly outperforms similar devices from previous works. The outstanding operation of 2DEG at the interface of AO/ZnO as a channel presents a possibility for application to a 2D‐based integrated circuit.

中文翻译：

场效应晶体管在原子层沉积的Al2O3 / ZnO薄膜界面处的二维电子气的表征

由于可以避免使用单晶氧化物衬底，因此在非晶薄膜杂氧化物界面上发生的2D电子气（2DEG）现象备受关注。在这项研究中，使用ZnO作为底部衬底对非晶-Al ₂ O ₃（a- AO）/ ZnO界面处的2DEG进行分析，两个氧化物膜均通过原子层沉积生长。在先前生长的ZnO薄膜上使用Al（CH ₃）₃作为a - AO薄膜生长的Al前驱物后，其强大的还原能力会在界面处诱发2DEG的形成。霍尔测量的结果是，a- AO / ZnO界面上的2DEG的薄层电阻为2.7×10⁴ Ω▫ ^-1和霍尔迁移率的8.4厘米² V ^-1 小号^-1。使用角分辨X射线光电子能谱，计算得出2DEG层的厚度为0.62 nm，约为纤锌矿型ZnO晶胞c轴的120％。制作的场效应晶体管的阈值电压为-2.4 V，亚阈值摆幅为0.33 V dec ^-1，开/关比为9.4×10 ⁶，明显优于以前的工作。2DEG在AO / ZnO接口作为通道的出色操作为应用到基于2D的集成电路提供了可能性。

更新日期：2021-01-14

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