We investigated the effect of growth temperature on the structural and electrical properties of InAlAs layers grown on InP (1 0 0) substrates by metalorganic chemical vapor deposition (MOCVD) method. Flat surface morphology of InAlAs layers with root mean square (RMS) surface roughness values below 0.4 nm were obtained at 500 °C and 660 °C, while RMS surface roughness values of InAlAs layers grown in the region of intermediate temperature increase from 0.7 nm at 540 °C to 3.9 nm at 620 °C with increasing growth temperature. This increase in surface roughness is caused by the phase separation of the InAlAs layer, which is divided into In-rich and Al-rich column regions. The resistivity values of the InAlAs layers grown at 500 °C and 660 °C, in which the phase separation was not observed, were analyzed by the transmission line method (TLM) and those values were ~1 × 10⁴ Ω·cm and 0.06 Ω·cm, respectively. We propose that oxygen atoms being incorporated into InAlAs layers during growth were the cause effect explaining the change in resistivity depending on the growth temperature. In order to evaluate high-resistivity InAlAs layers grown at 500 °C for a buffer layer of devices, we fabricated InGaAs-channel metal oxide field effect transistors (MOSFETs). The on/off current ratio values obtained from I_D-V_G transfer measurement was a value of 6.10 × 10⁵, indicating a high-performance characteristic.

我们研究了生长温度对在InP上生长的InAlAs层的结构和电性能的影响（1  0 0）通过金属有机化学气相沉积（MOCVD）方法的衬底。在500°C和660°C下获得均方根（RMS）表面粗糙度值低于0.4 nm的InAlAs层的平面形貌，而在中间温度区域生长的InAlAs层的RMS表面粗糙度值从0.7 nm增加到随着生长温度的升高，在620°C时从540°C到3.9 nm。表面粗糙度的这种增加是由InAlAs层的相分离引起的，该相分离分为In富集区和Al富集区。通过传输线法（TLM）分析了在500°C和660°C下生长的InAlAs层的电阻率值，其中未观察到相分离，这些电阻率值为〜1×10 ⁴ Ω·cm和0.06Ω·cm。我们认为，在生长过程中将氧原子掺入InAlAs层是解释电阻率随生长温度变化的原因。为了评估在500°C下生长的器件缓冲层的高电阻InAlAs层，我们制造了InGaAs沟道金属氧化物场效应晶体管（MOSFET）。由I _D -V _G传递测量得到的开/关电流比值为6.10×10 ⁵，表示高性能特性。