当前位置: X-MOL 学术Solid State Electron. › 论文详情
Our official English website, www.x-mol.net, welcomes your feedback! (Note: you will need to create a separate account there.)
Vertical growth characterization of InAs nanowires grown by selective area growth on patterned InP(111)B substrate by a MOCVD method
Solid-State Electronics ( IF 1.4 ) Pub Date : 2020-12-03 , DOI: 10.1016/j.sse.2020.107939
Chang-Hun Song , Minwoo Kong , Hyunchul Jang , Sang Tae Lee , Hyeong-Ho Park , Chang Zoo Kim , Sang Hyun Jung , Youngsu Choi , Shinkeun Kim , Dae-Hong Ko , Kwangseok Seo , Chan-Soo Shin

InAs nanowires (NWs) were selectively grown on hole patterned InP (111)B substrate by Metal-Organic Chemical Vapor Deposition (MOCVD). This study reports the vertical growth behavior of InAs NWs transitioned at a certain height and its difference under various growth conditions. This certain height is referred as “critical height.” This is a boundary where both vertical and lateral growth occur. Under this height, only vertical growth takes place. Vertical growth characteristics were reported through the determination of the critical height of NWs. The critical height was investigated for its three growth conditions; growth temperature, molar flow rates of In and As sources. Increase in growth temperature induced increase in critical height. Increase in growth temperature enhances the mobility of In adatom. This further increases diffusion length on the sidewall surface. However, increased AsH3 molar flow rate decreased the critical height. The surface reaction of In adatoms on the top (111)B surface of InAs NWs was reduced by the formation of As trimer. As a result, reduced relative vertical growth rate decreased the critical height of InAs NWs. The critical height of InAs NWs, however, was not changed by the variation of the Tri-Methyl Indium (TMIn) molar flow rate. This variation doesn’t affect the mobility of In adatom on the sidewall surface or the surface reaction rate on the top (111)B surface of NWs. Hence, we concluded that variation of the mobility of In adatom on the sidewall surface and relative vertical growth rate affect the critical height of InAs NWs.



中文翻译:

通过MOCVD方法在图案化的InP(111)B衬底上通过选择性区域生长而生长的InAs纳米线的垂直生长表征

通过金属有机化学气相沉积(MOCVD)在带​​孔图案的InP(111)B衬底上选择性生长InAs纳米线(NWs)。这项研究报告了InAs NWs在一定高度过渡时的垂直生长行为及其在各种生长条件下的差异。该特定高度称为“临界高度”。这是垂直和横向生长都发生的边界。在此高度下,仅发生垂直增长。通过确定净水器的临界高度报告了垂直生长特征。研究了其三种生长条件的临界高度。生长温度,In和As源的摩尔流量。生长温度的升高引起临界高度的增加。生长温度的升高增强了In原子的迁移率。这进一步增加了侧壁表面上的扩散长度。但是,增加的AsH3摩尔流量会降低临界高度。通过形成As三聚体,减少了InAs NWs的顶部(111)B表面上In原子的表面反应。结果,降低的相对垂直生长速率降低了InAs NW的临界高度。然而,InAs NW的临界高度并未因三甲基铟(TMIn)摩尔流量的变化而改变。这种变化不会影响NW侧壁表面In原子的迁移率或顶部(111)B表面的表面反应速率。因此,我们得出结论,In原子在侧壁表面上的迁移率和相对垂直生长速率的变化会影响InAs NW的临界高度。AsH3摩尔流量的增加降低了临界高度。InAs NWs顶部(111)B表面上In原子的表面反应通过As三聚体的形成而减少。结果,降低的相对垂直生长速率降低了InAs NW的临界高度。然而,InAs NW的临界高度并未因三甲基铟(TMIn)摩尔流量的变化而改变。这种变化不会影响NW侧壁表面In原子的迁移率或顶部(111)B表面的表面反应速率。因此,我们得出结论,In原子在侧壁表面上的迁移率和相对垂直生长速率的变化会影响InAs NW的临界高度。AsH3摩尔流量的增加降低了临界高度。通过形成As三聚体,减少了InAs NWs的顶部(111)B表面上In原子的表面反应。结果,降低的相对垂直生长速率降低了InAs NW的临界高度。然而,InAs NW的临界高度并未因三甲基铟(TMIn)摩尔流量的变化而改变。这种变化不会影响NW侧壁表面In原子的迁移率或顶部(111)B表面的表面反应速率。因此,我们得出结论,In原子在侧壁表面上的迁移率和相对垂直生长速率的变化会影响InAs NW的临界高度。相对垂直增长率的降低降低了InAs NW的临界高度。然而,InAs NW的临界高度并未因三甲基铟(TMIn)摩尔流量的变化而改变。这种变化不会影响NW侧壁表面In原子的迁移率或顶部(111)B表面的表面反应速率。因此,我们得出结论,In原子在侧壁表面上的迁移率和相对垂直生长速率的变化会影响InAs NW的临界高度。相对垂直增长率的降低降低了InAs NW的临界高度。然而,InAs NW的临界高度并未因三甲基铟(TMIn)摩尔流量的变化而改变。这种变化不会影响NW侧壁表面In原子的迁移率或顶部(111)B表面的表面反应速率。因此,我们得出结论,In原子在侧壁表面上的迁移率和相对垂直生长速率的变化会影响InAs NW的临界高度。

更新日期:2020-12-04
down
wechat
bug