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A wideband low power merged balance-balun-LNA and I/Q-mixer
Microelectronics Journal ( IF 1.9 ) Pub Date : 2020-12-03 , DOI: 10.1016/j.mejo.2020.104945
R. Eskandari , A. Ebrahimi , H. Faraji Baghtash

This paper presents a low power wideband RF receiver front-end in CMOS 180 ​nm technology that operates between 0.3 and 4.7 ​GHz. The mixer has a quadrature current commutating gilbert cell configuration that utilizes a novel broadband noise-canceling balanced balun-LNA as the transconductance stage. The noise-canceling balun LNA utilizes an additional noise-reduction technique that enhances its performance noticeably. Both of the common gate and common source stages of balun LNA are matched by employing equal-sized transistors that are biased with the same currents and load resistances. This technique results in superior symmetry, enhanced noise, and linearity performance under reduced power consumption. Post-layout simulation results show that the implemented balun LNA-I/Q-mixer has a conversion gain of 14.05 ​dB. The second and third-order intermodulation intercept points are +42.13 dBm and +4.13 dBm, respectively. The double-sideband NF is 4.74 ​dB. The proposed structure consumes only 6.7 ​mW from a 1.8 ​V supply and occupies a 0.056 ​mm2 chip area.



中文翻译:

宽带低功耗合并式平衡不平衡变压器LNA和I / Q混频器

本文介绍了采用0.3至4.7 GHz之间工作的CMOS 180 nm技术的低功耗宽带RF接收器前端。该混频器具有正交电流换向吉尔伯特单元配置,该配置采用新型宽带降噪平衡巴伦-LNA作为跨导级。降噪巴伦LNA利用附加的降噪技术来显着提高其性能。平衡-不平衡转换器LNA的公共栅极级和公共源极级都通过采用以相同电流和负载电阻偏置的相等尺寸的晶体管来匹配。此技术在降低功耗的情况下,可实现出色的对称性,增强的噪声和线性性能。布局后的仿真结果表明,已实现的巴伦LNA-I / Q混频器的转换增益为14.05 dB。二阶和三阶互调截距分别为+42.13 dBm和+4.13 dBm。双边带NF为4.74 dB。拟议的结构从1.8伏电源仅消耗6.7毫瓦,占用0.056毫米2芯片面积。

更新日期:2020-12-08
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