Abstract In2O3 thin films have been synthesized on glass substrates by spray pyrolysis then irradiated by electron beam (EB) at low energy of 0.8 MeV for three fluencies 4.1016, 35.1016 and 42.1016 electron/cm2. EB irradiation was performed by an industrial electron accelerator owned to COFICAB Company. Structural, optical, photoluminescence and morphological properties of In2O3 thin films have been investigated before and after EB irradiation by X-ray diffraction, spectrophotometer, SEM and fluorescence spectrometer. After EB irradiation at 4.1016 electron/cm2, the preferred orientation of In2O3 thin film was moved from (222) to (400) with a simultaneous improvement in grain size. For EB fluency of 35.1016 electron/cm2, In2O3 thin film has been strangely transformed from polycrystalline phase to a single crystal structure. After irradiation at 42.1016 electron/cm2 fluency, In2O3 thin film became amorphous. A clear enhancement in optical transmission has been observed after irradiation with a slight variation in band gap energy. Surface morphology of the irradiated In2O3 thin films has been transformed from rough to continuous, uniform and smooth surface. This study have shown that EB irradiation can be considered as a useful mean for enhancement of In2O3 thin films physical properties and suggest its use for the space optoelectronic applications.

中文翻译：

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低能电子束辐照引起的喷涂 In2O3 薄膜结构、光学和形态特性的增强

摘要 通过喷雾热解在玻璃基板上合成了 In2O3 薄膜，然后用电子束 (EB) 在 0.8 MeV 的低能量下以 4.1016、35.1016 和 42.1016 电子/cm2 三种流率进行辐照。EB 辐照由 COFICAB 公司拥有的工业电子加速器进行。通过X射线衍射、分光光度计、SEM和荧光光谱仪研究了EB辐照前后In2O3薄膜的结构、光学、光致发光和形貌特性。在 4.1016 电子/cm2 的 EB 辐照后，In2O3 薄膜的择优取向从 (222) 移动到 (400)，同时晶粒尺寸有所改善。对于 35.1016 电子/cm2 的电子束流度，In2O3 薄膜已经从多晶相奇怪地转变为单晶结构。42 度照射后。1016电子/cm2流度，In2O3薄膜变为非晶态。辐照后观察到光传输的明显增强，带隙能量略有变化。辐照后的 In2O3 薄膜的表面形态已经从粗糙转变为连续、均匀和光滑的表面。这项研究表明，EB 辐射可以被认为是增强 In2O3 薄膜物理性能的有用手段，并建议将其用于空间光电应用。