Abstract

Electronic structure of molybdenum oxides obtained by the oxidation of molybdenum at an oxygen pressure of 1 Torr (thin film) and air (thick film) was studied. It was shown that a thick oxide film is formed from MoO₃ oxide, and a thin film from a mixture of MoO₃ and MoO₂ oxides, which is reflected in the form of valence band spectra. Oxygen on the surface belongs both in molybdenum oxide and in the hydroxyl group, which is associated with dissociative adsorption of water during the oxidation of molybdenum in air for a thick film.

中文翻译：

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氧化钼在不同压力下的电子结构

摘要

研究了在1 Torr（薄膜）和空气（厚膜）的氧气压力下氧化钼所获得的氧化钼的电子结构。结果表明，厚的氧化膜是由MoO ₃氧化物形成的，而薄膜是由MoO ₃和MoO ₂氧化物的混合物形成的，它们以价带谱的形式反射。表面上的氧气既属于氧化钼，又属于羟基，这与在空气中的钼氧化形成厚膜时与水的解离吸附有关。