Abstract

The structural and some other characteristics of quasi-freestanding single-layer graphene obtained by annealing of the buffer layer in the flow of hydrogen are studied in comparison with those of conventional epitaxial graphene. The high structural quality and good lateral uniformity of the thus-obtained graphene film are checked and confirmed by the use of such techniques as Raman spectroscopy, atomic force, and Kelvin probe force microscopies. The confirmation of its single-layer and freestanding character is obtained via the analysis of respective data of X-ray photoelectron spectroscopy.

中文翻译：

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在4H -SiC衬底上生长的常规外延石墨烯和准独立外延石墨烯的比较研究

摘要

与常规外延石墨烯相比，研究了通过在氢气流中对缓冲层进行退火而获得的准自立式单层石墨烯的结构和其他一些特性。通过使用拉曼光谱法，原子力和开尔文探针力显微技术等技术来检查和确认由此获得的石墨烯膜的高结构质量和良好的横向均匀性。通过分析X射线光电子能谱的各个数据，可以确定其单层和独立性。