Abstract

Forward and reverse current–voltage characteristics of commercial rectifier diodes based on a Schottky barrier to 4H-SiC are studied in the temperature range 20–370°C at a maximum current of 10–20 mA and maximum voltage of 10–100V. It is found that the diodes can be considered nearly ideal with a Schottky-barrier height of ~1.5 eV, with the forward current over the entire temperature range and the reverse current at high temperatures being largely due to thermionic emission. The upper limit of the working temperature range of 4H-SiC-based Schottky rectifier diodes at the currents and voltages under study approximately corresponds to the fundamental limit determined by the barrier height. In the reported experiment it reaches 370°C.

中文翻译：

---

高温下基于碳化硅的肖特基整流二极管的特性

摘要

在20–370°C的温度范围内，最大电流10–20 mA和最大电压10–100V的条件下，研究了基于肖特基势垒对4 H -SiC的商用整流二极管的正向和反向电流-电压特性。发现二极管的肖特基势垒高度约为1时，可以认为是几乎理想的二极管。5 eV，整个温度范围内的正向电流和高温下的反向电流很大程度上归因于热电子发射。在研究的电流和电压下，基于4 H -SiC的肖特基整流二极管的工作温度范围的上限大约对应于由势垒高度确定的基本极限。在报道的实验中，温度达到370°C。